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| ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES * VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz * HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz * LG 0.20 m, WG = 200 m * LOW COST METAL CERAMIC PACKAGE * TAPE & REEL PACKAGING OPTION AVAILABLE Noise Figure, NF (dB) 1.2 NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 GA 0.8 18 0.6 15 DESCRIPTION The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0.4 NF 0.2 12 9 0 2 4 6 8 10 20 30 6 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF 1 NE32584C 84C UNITS dB dB mA V mS A C/W C/W 11.0 20 -2.0 45 MIN TYP 0.45 12.5 60 -0.7 60 0.5 750 350 10.0 90 -0.2 MAX 0.55 PARAMETERS AND CONDITIONS Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V,VGS = 0 V Pinch-off Voltage, VDS = 2 V, IDS = 100 A Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3 V Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case) GA1 IDSS VP gm IGSO RTH (CH-A) RTH (CH-C) Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories Associated Gain, GA (dB) 1.0 21 NE32584C ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGS IDS IGRF TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA A C C mW RATINGS 4.0 -3.0 IDSS 100 150 -65 to +150 165 TYPICAL NOISE PARAMETERS (TA = 25C) VDS = 2 V, ID = 10 mA FREQ. (GHz) 2 4 6 8 10 12 14 16 18 NFOPT (dB) 0.29 0.30 0.33 0.36 0.40 0.45 0.54 0.68 0.85 GA (dB) 20.0 18.3 16.5 15.0 13.6 12.5 12.0 11.8 11.5 OPT MAG 0.86 0.76 0.69 0.63 0.59 0.54 0.48 0.40 0.31 ANG 22 45 70 96 122 147 171 -165 -144 Rn/50 0.27 0.25 0.18 0.11 0.08 0.04 0.04 0.05 0.06 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES 200 (TA = 25C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Drain Current, ID (mA) 150 80 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 100 50 -0.6 V -0.8 V 0 50 100 150 200 0 1.5 3.0 Ambient Temperature, TA (C) Drain to Source Voltage, VDS (V) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 14 GA Associated Gain, GA (dB) Noise Figure, NF (dB) Noise Figure, NF (dB) GA 20 12 2.0 1.5 1.0 0.5 11 10 16 1.0 12 0.5 NF 0 1 2 4 6 8 10 14 20 30 8 NF 4 0 10 20 30 Frequency, f (GHz) Drain Current, ID (mA) Associated Gain, GA (dB) 13 NE32584C TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 +120 +90 5 4 3 +30 +60 j10 S22 20 GHz 25 50 S11 20 GHz 100 S22 .1 GHz S11 .1 GHz +150 2 1 0 10 S21 180 .1 GHz S12 .1 GHz .06 .1 0 -j10 -150 S21 20 GHz S12 20 GHz -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) -120 -90 -60 NE32584C VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.100 0.200 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.500 12.000 13.000 14.000 15.000 16.000 17.000 18.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 1.001 1.001 0.998 0.989 0.967 0.943 0.907 0.857 0.800 0.755 0.725 0.683 0.663 0.585 0.565 0.551 0.548 0.560 0.565 0.565 0.575 ANG -1.75 -3.60 -8.95 -17.72 -34.63 -50.81 -66.71 -81.86 -96.39 -110.25 -124.55 -138.37 -154.60 178.24 168.24 148.32 129.66 112.17 94.50 76.97 60.33 MAG 5.202 5.189 5.178 5.128 5.013 4.865 4.703 4.493 4.297 4.143 4.068 3.994 4.017 3.849 3.790 3.720 3.669 3.652 3.557 3.448 3.357 S21 ANG 178.07 176.33 170.78 161.98 145.12 128.82 112.71 97.04 82.71 69.20 55.99 42.58 28.11 6.85 -0.46 -13.97 -28.93 -44.37 -60.11 -74.93 -89.44 MAG 0.001 0.003 0.008 0.015 0.030 0.043 0.054 0.062 0.069 0.075 0.081 0.084 0.089 0.091 0.090 0.090 0.089 0.087 0.085 0.084 0.082 S12 ANG 83.90 86.02 83.30 76.85 64.62 53.33 42.06 31.40 21.97 13.52 5.09 -3.80 -12.63 -26.79 -31.63 -41.14 -52.52 -64.18 -76.05 -89.05 -103.35 MAG 0.587 0.585 0.585 0.581 0.576 0.567 0.554 0.531 0.503 0.483 0.470 0.453 0.431 0.359 0.335 0.300 0.281 0.276 0.274 0.259 0.263 S22 ANG -1.59 -3.13 -7.50 -14.91 -28.90 -42.28 -55.03 -66.77 -77.55 -87.72 -97.81 -106.93 -116.85 -134.35 -140.87 -157.16 -173.11 171.08 154.07 135.78 116.62 K -0.075 -0.025 0.047 0.118 0.188 0.235 0.312 0.426 0.541 0.618 0.646 0.724 0.734 0.900 0.960 1.000 1.029 1.025 1.052 1.101 1.120 MAG (dB) 37.162 32.380 28.111 25.339 22.230 20.536 19.400 18.601 17.943 17.423 17.009 16.771 16.545 16.263 16.244 16.163 15.113 15.253 14.824 14.196 14.012 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE32584C TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 +120 +90 10 8 6 +30 +60 j10 S11 20 GHz 0 10 25 50 S22 20 GHz 100 S22 .1 GHz S11 .1 GHz +150 4 2 180 .02 .06 .1 0 S21 .1 GHz S21 20 GHz S12 .1 GHz -j10 -150 -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 20 mA) -120 S12 20 GHz -90 -60 NE32584C VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) 0.100 0.200 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 1.001 1.000 0.997 0.987 0.958 0.925 0.879 0.821 0.757 0.708 0.674 0.628 0.605 0.549 0.513 0.504 0.504 0.517 0.527 0.530 0.543 ANG -1.81 -3.77 -9.43 -18.65 -36.35 -53.13 -69.42 -84.79 -99.35 -113.22 -127.54 -141.15 -157.21 -174.62 165.35 145.18 126.44 109.11 91.65 74.05 57.36 MAG 6.552 6.531 6.511 6.432 6.243 5.999 5.734 5.417 5.121 4.892 4.754 4.617 4.599 4.503 4.291 4.193 4.123 4.106 4.001 3.888 3.785 S21 ANG 178.03 176.09 170.33 161.14 143.49 126.61 110.09 94.24 79.85 66.26 53.02 39.77 25.65 11.83 -2.24 -15.42 -29.96 -45.03 -60.55 -75.22 -89.66 MAG 0.001 0.003 0.007 0.014 0.027 0.038 0.048 0.056 0.062 0.068 0.074 0.078 0.083 0.086 0.087 0.087 0.088 0.087 0.086 0.085 0.083 S12 ANG 84.76 86.79 83.69 77.38 65.71 55.04 44.64 34.90 26.33 18.60 10.86 2.80 -5.30 -14.51 -23.36 -32.46 -43.35 -54.72 -66.36 -79.11 -93.10 MAG 0.509 0.507 0.506 0.502 0.496 0.487 0.474 0.454 0.430 0.413 0.401 0.389 0.370 0.330 0.283 0.248 0.229 0.225 0.224 0.208 0.212 S22 ANG -1.76 -3.19 -7.53 -14.91 -28.84 -41.96 -54.20 -65.25 -75.31 -84.85 -94.21 -102.27 -111.19 -121.08 -133.16 -149.27 -165.01 179.28 161.59 142.58 121.91 K -0.078 0.011 0.063 0.134 0.232 0.303 0.397 0.519 0.646 0.723 0.754 0.826 0.836 0.927 1.017 1.052 1.061 1.050 1.058 1.098 1.114 MAG (dB) 38.164 33.379 29.685 26.622 23.640 21.983 20.772 19.856 19.170 18.570 18.078 17.723 17.436 17.190 16.128 15.439 15.202 15.376 15.203 14.697 14.536 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE32584C NE32584C NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF LD Q1 RG_PKG GATE 0.5 ohms LG_PKG 0.28nH LG 0.55nH 0.4nH LD_PKG 0.3nH RD_PKG DRAIN 0.2 ohms CCD_PKG CCG_PKG 0.14pF LS_PKG 0.095nH 0.1pF CSG_PKG RS_PKG 0.2 ohms CSD_PKG 0.01pF SOURCE 0.01pF FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.6723 0 4 0.115 0.08 0.07 2 0.5 0.715 3e-13 1.22 0 0 5e-12 0.13e-12 1000 1e-9 0.3e-12 0.02e-12 0.3 0.1 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 2 2 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA Date: 3/24/97 (1) Series IV Libra TOM Model NE32584C OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84C 1.78 0.2 S 1.78 0.2 D D S G 0.5 0.1 (ALL LEADS) 1.0 0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. ORDERING INFORMATION PART NUMBER NE32584C-S NE32584C-T1 AVAILABILITY Bulk up to 1K 1K/Reel LEAD LENGTH 1.0 mm 1.0 mm PACKAGE OUTLINE 84C 84C EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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